Team:EPF Lausanne/Microfluidics/Making/PartI

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                  <li class="active"><span>Making a chip Part I: mask and wafer</span></li>
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                <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Making/PartI">Part I</a></li>
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  <li class="active">Part I: mask and wafer</li>
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<a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Designing" class="btn btn-primary pull-left" role="button">&lt;- Designing a chip</a>
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<h2 id="introductiontophotoresist">Introduction to photolithography</h2>
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<br/>
<p class="lead">
<p class="lead">
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The following processes will explain the making of a mask and a positive/negative resist wafer.</p>
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The following processes will explain how a mask and a positive/negative resist wafer are made. These two components are essential for the creation of our chips, as they are the master plan, the mold for the chip. This is how it works: a mask is used as a mold to make a wafer, and a wafer is used as a mold to make each of the microfluidic chip's layers (control and flow layers).</p>
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<p class="lead">A wafer is used as a mold to make the microfluidic layer.</p>
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<div class="cntr col col-md-6">
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<p>Mask</p>
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<a href="https://static.igem.org/mediawiki/2014/a/a8/Mask.JPG" data-lightbox="image1" data-title="Mask (to make wafer)"><img src="https://static.igem.org/mediawiki/2014/a/a8/Mask.JPG" class="img-border" width="35%"></a>
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<div class="cntr col col-md-6">
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<p>Wafers</p>
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<a href="https://static.igem.org/mediawiki/2014/9/9f/Wafers.JPG" data-lightbox="image1" data-title="Wafers (to make the chip)"><img src="https://static.igem.org/mediawiki/2014/9/9f/Wafers.JPG" class="img-border" width="35%"></a>
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</div></div>
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<p class="lead">A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:</p>
 
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<p class="lead">-A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.</p>
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<br /><br />
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<p class="lead">- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.</p>
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 +
<p class="lead">Here are defined the two main types of photoresist. A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:</p>
 +
<p class="lead">- A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.</p>
 +
<p class="lead">- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.</p>
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<div class="cntr">
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<img src="https://static.igem.org/mediawiki/2014/a/ac/Resist.png" align="middle" class="img-responsive" />
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<div class="cntr">
<div class="cntr">
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<h3>Mask process and outline</h3>
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<h2 id="processoutline">Mask process and outline</h2>
<table class="table table-striped valign-middle">
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       <td><b>01</b></td>
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       <td><b>1</b></td>
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       <td></td>
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       <td> </td>
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       <td></td>
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       <td> </td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br />
       Cross section of a photolithography mask</td>
       Cross section of a photolithography mask</td>
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   <tr>
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       <td><b>02</b></td>
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       <td><b>2</b></td>
       <td><b>Laser exposure</b></td>
       <td><b>Laser exposure</b></td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br />
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       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" data-lightbox="img1" data-title="Heidelberg DWL200, Laser lithography system"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" width="60%"/></a><br />
       Heidelberg DWL200, Laser lithography system</td>
       Heidelberg DWL200, Laser lithography system</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
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     <tr>
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       <td><b>03</b></td>
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       <td><b>3</b></td>
       <td><b>Developing of the mask</b></td>
       <td><b>Developing of the mask</b></td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" width="60%"/><br />
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       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" data-lightbox="img1" data-title="DV10 Mask and Thick positive resist developer"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" width="60%"/></a><br />
       DV10 Mask and Thick positive resist developer</td>
       DV10 Mask and Thick positive resist developer</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/6c/Cr_blank_fab3.gif" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/6c/Cr_blank_fab3.gif" /><br />
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       <td><b>04</b></td>
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       <td><b>4</b></td>
       <td><b>Etching of the chrome</b></td>
       <td><b>Etching of the chrome</b></td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/><br />
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       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Coillard Gravure"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/></a><br />
       Coillard Gravure</td>
       Coillard Gravure</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/a9/Cr_blank_fab4.gif" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/a9/Cr_blank_fab4.gif" /><br />
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       <td><b>05</b></td>
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       <td><b>5</b></td>
       <td><b>Removal of Resist</b></td>
       <td><b>Removal of Resist</b></td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/><br />
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       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Coillard Photolithographie"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/></a><br />
       Coillard Photolithographie</td>
       Coillard Photolithographie</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/aa/Cr_blank_fab5.gif" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/aa/Cr_blank_fab5.gif" /><br />
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     <tr>
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       <td><b>06</b></td>
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       <td><b>6</b></td>
       <td><b>Use of mask</b></td>
       <td><b>Use of mask</b></td>
       <td class="cntr"></td>
       <td class="cntr"></td>
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   </tbody>
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</table>
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<br/>
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<h3>Control Layer Process outline</h3>
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<h2 id="controllayer">Control Layer Process outline</h2>
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       <td><b>01</b></td>
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       <td><b>1</b></td>
       <td><b>Substrate:</b> Wafer Clean</td>
       <td><b>Substrate:</b> Wafer Clean</td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" width="60%"/><br />
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       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" data-lightbox="img1" data-title="Tepla"><img src="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" width="70%"/></a><br />
       Tepla 300</td>
       Tepla 300</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/71/Cl1.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/71/Cl1.png" /><br />
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   <tr>
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       <td><b>02</b></td>
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       <td><b>2</b></td>
       <td><b>Photolith:</b> Resist deposition
       <td><b>Photolith:</b> Resist deposition
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Photo Resist : Su8 GM1070 – 30μm
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      Photo Resist : Su8 GM1070 – 30μm
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</td>
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      </td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="60%"/><br />
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       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%"/></a><br />
       Sawatec</td>
       Sawatec</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/82/Cl2.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/82/Cl2.png" /><br />
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       <td><b>03</b></td>
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       <td><b>3</b></td>
       <td><b>Relaxation time + Softbake</b></td>
       <td><b>Relaxation time + Softbake</b></td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="60%" /><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%" /></a><br />
       Sawatec</td>
       Sawatec</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e8/Cl3.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e8/Cl3.png" /><br />
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     <tr>
     <tr>
-
       <td><b>04</b></td>
+
       <td><b>4</b></td>
       <td><b>Photolith:</b>UV exposure</td>
       <td><b>Photolith:</b>UV exposure</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" data-lightbox="img1" data-title="Mask Aligner"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="70%"/></a><br />
       Mask Aligner</td>
       Mask Aligner</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/ab/Cl4.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/ab/Cl4.png" /><br />
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     <tr>
     <tr>
-
       <td><b>05</b></td>
+
       <td><b>5</b></td>
       <td><b>Post exposure bake</b></td>
       <td><b>Post exposure bake</b></td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%"/></a><br />
       Sawatec</td>
       Sawatec</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/98/Cl5.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/98/Cl5.png" /><br />
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     <tr>
     <tr>
-
       <td><b>06</b></td>
+
       <td><b>6</b></td>
       <td><b>Relaxation delay</b></td>
       <td><b>Relaxation delay</b></td>
       <td class="cntr"></td>
       <td class="cntr"></td>
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     <tr>
     <tr>
-
       <td><b>07</b></td>
+
       <td><b>7</b></td>
       <td><b>Photolith:</b> Develop</td>
       <td><b>Photolith:</b> Develop</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" data-lightbox="img1" data-title="Wetbench plane solvent"><img src="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" width="70%"/></a><br />
       Wetbench plane solvent</td>
       Wetbench plane solvent</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br />
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     <tr>
     <tr>
-
       <td><b>08</b></td>
+
       <td><b>8</b></td>
       <td><b>Hard bake</b></td>
       <td><b>Hard bake</b></td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" data-lightbox="img1" data-title="DataPlate"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="70%"/></a><br />
       DataPlate </td>
       DataPlate </td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br />
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</table>
</table>
 +
<br/>
-
 
+
<h2 id="flowlayer">Flow layer process outline</h2>
-
<h3>Flow layer process outline</h3>
+
<table class="table table-striped valign-middle">
<table class="table table-striped valign-middle">
   <thead>
   <thead>
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   <tbody>
   <tbody>
     <tr>
     <tr>
-
       <td><b>01</b></td>
+
       <td><b>1</b></td>
       <td><b>Substrate:</b> Si test Priming</td>
       <td><b>Substrate:</b> Si test Priming</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" data-lightbox="img1" data-title="YES III"><img src="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" width="70%"/></a><br />
       YES III</td>
       YES III</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/35/Fl1.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/35/Fl1.png" /><br />
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   <tr>
   <tr>
-
       <td><b>02</b></td>
+
       <td><b>2</b></td>
       <td><b>Photolith:</b> Resist deposition
       <td><b>Photolith:</b> Resist deposition
Photo Resist : AZ9260 – 14μm
Photo Resist : AZ9260 – 14μm
</td>
</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" data-lightbox="img1" data-title="EVG 150"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="70%"/></a><br />
       EVG 150</td>
       EVG 150</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl2.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl2.png" /><br />
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     <tr>
     <tr>
-
       <td><b>03</b></td>
+
       <td><b>3</b></td>
       <td><b>Rehydratation time</b></td>
       <td><b>Rehydratation time</b></td>
       <td class="cntr"></td>
       <td class="cntr"></td>
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     <tr>
     <tr>
-
       <td><b>04</b></td>
+
       <td><b>4</b></td>
       <td><b>Photolith:</b>UV exposure</td>
       <td><b>Photolith:</b>UV exposure</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" data-lightbox="img1" data-title="Mask Aligner"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="70%"/></a><br />
       Mask Aligner</td>
       Mask Aligner</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/66/Fl3.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/66/Fl3.png" /><br />
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     <tr>
     <tr>
-
       <td><b>05</b></td>
+
       <td><b>5</b></td>
       <td><b>Develop immediately</b></td>
       <td><b>Develop immediately</b></td>
       <td class="cntr"></td>
       <td class="cntr"></td>
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     </tr>
     </tr>
     <tr>
     <tr>
-
       <td><b>06</b></td>
+
       <td><b>6</b></td>
       <td><b>Photolith:</b> Develop</td>
       <td><b>Photolith:</b> Develop</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" data-lightbox="img1" data-title="EVG 150"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="70%"/></a><br />
       EVG 150</td>
       EVG 150</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/5/5c/Fl4.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/5/5c/Fl4.png" /><br />
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     <tr>
     <tr>
-
       <td><b>07</b></td>
+
       <td><b>7</b></td>
       <td><b>Rinse with Deionized water</b></td>
       <td><b>Rinse with Deionized water</b></td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Colliard Wetbench"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="70%"/></a><br />
       Coillard Wetbench</td>
       Coillard Wetbench</td>
       <td class="cntr">Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench
       <td class="cntr">Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench
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     <tr>
     <tr>
-
       <td><b>08</b></td>
+
       <td><b>8</b></td>
       <td><b>Bake to round edges</b></td>
       <td><b>Bake to round edges</b></td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="60%"/><br />
+
       <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" data-lightbox="img1" data-title="DataPlate"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="70%"/></a><br />
       DataPlate</td>
       DataPlate</td>
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl5.png" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl5.png" /><br />
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</table>
</table>
 +
 +
<a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Designing" class="btn btn-primary pull-left" role="button">&lt;- Designing a chip</a>
 +
 +
<a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Making/PartII" class="btn btn-primary pull-right" role="button">Next step: Making a chip part II -&gt;</a>
 +
<div class="clearfix"></div>
 +
 +
</div>
 +
</div>
 +
</div>
 +
 +
 +
 +
<div class="col col-md-3">
 +
<nav id="affix-nav" class="sidebar hidden-sm hidden-xs">
 +
    <ul class="nav sidenav box" data-spy="affix" data-offset-top="200" data-offset-bottom="600">
 +
    <li class="active"><a href="#introductiontophotoresist">Introduction</a></li> 
 +
<li><a href="#processoutline">Mask process and outline</a></li>
 +
        <li><a href="#controllayer">Control layer process outline</a></li>
 +
        <li><a href="#flowlayer">Flow layer process outline</a></li>
 +
    </ul>
 +
</nav>
</div>
</div>
</div>
</div>

Latest revision as of 01:24, 18 October 2014

<- Designing a chip Next step: Making a chip part II ->


Introduction to photolithography


The following processes will explain how a mask and a positive/negative resist wafer are made. These two components are essential for the creation of our chips, as they are the master plan, the mold for the chip. This is how it works: a mask is used as a mold to make a wafer, and a wafer is used as a mold to make each of the microfluidic chip's layers (control and flow layers).

Mask

Wafers



Here are defined the two main types of photoresist. A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:

- A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.

- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.

Mask process and outline

Step Process description Machines Cross-section after process
1
Cross section of a photolithography mask
2 Laser exposure
Heidelberg DWL200, Laser lithography system

The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.
3 Developing of the mask
DV10 Mask and Thick positive resist developer

A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist
4 Etching of the chrome
Coillard Gravure

The chrome is removed at the sites where the resist layer is missing, using an acid bath.
5 Removal of Resist
Coillard Photolithographie

Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface.
6 Use of mask
The mask can now be used to expose its pattern on the wafer using UV light

Control Layer Process outline

Step Process description Machines Cross-section after process
1 Substrate: Wafer Clean
Tepla 300

Clean the wafer using plasma treatment
2 Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm
Sawatec

A layer of negative photoresist is added on the wafer by spincoating
3 Relaxation time + Softbake
Sawatec

Softbake wafer using Sawatec hotplate, to solidify the photo resist
4 Photolith:UV exposure
Mask Aligner

The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR.
5 Post exposure bake
Sawatec

Bake wafer using Sawatec hotplate
6 Relaxation delay Wait 1 hour – overnight
7 Photolith: Develop
Wetbench plane solvent

This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench
8 Hard bake
DataPlate

Bake 135°C 2 hours, using an oven

Flow layer process outline

Step Process description Machines Cross-section after process
1 Substrate: Si test Priming
YES III

Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating
2 Photolith: Resist deposition Photo Resist : AZ9260 – 14μm
EVG 150

A layer of positive photoresist is added on the wafer by spincoating
3 Rehydratation time Wait minimum 1 hour, maximum 3 days
4 Photolith:UV exposure
Mask Aligner

The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR.
5 Develop immediately Wait maximum 1 hour before develop
6 Photolith: Develop
EVG 150

This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150
7 Rinse with Deionized water
Coillard Wetbench
Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench
8 Bake to round edges
DataPlate

Bake in horizontal position, 160°C 2 hours
<- Designing a chip Next step: Making a chip part II ->

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