Team:EPF Lausanne/Microfluidics/Making/PartI
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- | + | <li class="active"><span>Making a chip Part I: mask and wafer</span></li> | |
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+ | <h2 id="introductiontophotoresist">Introduction to photolithography</h2> | ||
+ | |||
+ | <br/> | ||
+ | |||
+ | <p class="lead"> | ||
+ | The following processes will explain how a mask and a positive/negative resist wafer are made. These two components are essential for the creation of our chips, as they are the master plan, the mold for the chip. This is how it works: a mask is used as a mold to make a wafer, and a wafer is used as a mold to make each of the microfluidic chip's layers (control and flow layers).</p> | ||
+ | |||
+ | <div class="row"> | ||
+ | <div class="cntr col col-md-6"> | ||
+ | <p>Mask</p> | ||
+ | <a href="https://static.igem.org/mediawiki/2014/a/a8/Mask.JPG" data-lightbox="image1" data-title="Mask (to make wafer)"><img src="https://static.igem.org/mediawiki/2014/a/a8/Mask.JPG" class="img-border" width="35%"></a> | ||
+ | </div> | ||
+ | <div class="cntr col col-md-6"> | ||
+ | <p>Wafers</p> | ||
+ | <a href="https://static.igem.org/mediawiki/2014/9/9f/Wafers.JPG" data-lightbox="image1" data-title="Wafers (to make the chip)"><img src="https://static.igem.org/mediawiki/2014/9/9f/Wafers.JPG" class="img-border" width="35%"></a> | ||
+ | </div></div> | ||
+ | |||
+ | |||
+ | <br /><br /> | ||
+ | |||
+ | <p class="lead">Here are defined the two main types of photoresist. A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:</p> | ||
+ | |||
+ | <p class="lead">- A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.</p> | ||
+ | <p class="lead">- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.</p> | ||
+ | |||
+ | <div class="cntr"> | ||
+ | <img src="https://static.igem.org/mediawiki/2014/a/ac/Resist.png" align="middle" class="img-responsive" /> | ||
+ | </div> | ||
<div class="cntr"> | <div class="cntr"> | ||
- | < | + | <h2 id="processoutline">Mask process and outline</h2> |
<table class="table table-striped valign-middle"> | <table class="table table-striped valign-middle"> | ||
<thead> | <thead> | ||
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<tbody> | <tbody> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>1</b></td> |
- | <td></td> | + | <td> </td> |
- | <td></td> | + | <td> </td> |
<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br /> | ||
Cross section of a photolithography mask</td> | Cross section of a photolithography mask</td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>2</b></td> |
<td><b>Laser exposure</b></td> | <td><b>Laser exposure</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" data-lightbox="img1" data-title="Heidelberg DWL200, Laser lithography system"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" width="60%"/></a><br /> |
Heidelberg DWL200, Laser lithography system</td> | Heidelberg DWL200, Laser lithography system</td> | ||
<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>3</b></td> |
<td><b>Developing of the mask</b></td> | <td><b>Developing of the mask</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" data-lightbox="img1" data-title="DV10 Mask and Thick positive resist developer"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" width="60%"/></a><br /> |
DV10 Mask and Thick positive resist developer</td> | DV10 Mask and Thick positive resist developer</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/6c/Cr_blank_fab3.gif" /><br /> |
A chemical treatment is used to | A chemical treatment is used to | ||
remove the PR that was exposed by the laser in the previous step, | remove the PR that was exposed by the laser in the previous step, | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>4</b></td> |
<td><b>Etching of the chrome</b></td> | <td><b>Etching of the chrome</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Coillard Gravure"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/></a><br /> |
Coillard Gravure</td> | Coillard Gravure</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/a9/Cr_blank_fab4.gif" /><br /> |
The chrome is removed at the sites where the resist layer is missing, using an acid bath. | The chrome is removed at the sites where the resist layer is missing, using an acid bath. | ||
</td> | </td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>5</b></td> |
<td><b>Removal of Resist</b></td> | <td><b>Removal of Resist</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Coillard Photolithographie"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/></a><br /> |
Coillard Photolithographie</td> | Coillard Photolithographie</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/aa/Cr_blank_fab5.gif" /><br /> |
Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. | Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. | ||
</td> | </td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>6</b></td> |
<td><b>Use of mask</b></td> | <td><b>Use of mask</b></td> | ||
<td class="cntr"></td> | <td class="cntr"></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e1/Cr_blank_use.gif" /><br /> |
The mask can now be used to expose its pattern on the wafer using UV light | The mask can now be used to expose its pattern on the wafer using UV light | ||
</td> | </td> | ||
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</tbody> | </tbody> | ||
</table> | </table> | ||
- | + | <br/> | |
- | < | + | <h2 id="controllayer">Control Layer Process outline</h2> |
<table class="table table-striped valign-middle"> | <table class="table table-striped valign-middle"> | ||
<thead> | <thead> | ||
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<tbody> | <tbody> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>1</b></td> |
<td><b>Substrate:</b> Wafer Clean</td> | <td><b>Substrate:</b> Wafer Clean</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" data-lightbox="img1" data-title="Tepla"><img src="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" width="70%"/></a><br /> |
Tepla 300</td> | Tepla 300</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/71/Cl1.png" /><br /> |
Clean the wafer using plasma treatment </td> | Clean the wafer using plasma treatment </td> | ||
</tr> | </tr> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>2</b></td> |
<td><b>Photolith:</b> Resist deposition | <td><b>Photolith:</b> Resist deposition | ||
- | Photo Resist : Su8 GM1070 – 30μm | + | Photo Resist : Su8 GM1070 – 30μm |
- | </td> | + | </td> |
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%"/></a><br /> |
Sawatec</td> | Sawatec</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/82/Cl2.png" /><br /> |
A layer of negative photoresist is added on the wafer by spincoating</td> | A layer of negative photoresist is added on the wafer by spincoating</td> | ||
</tr> | </tr> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>3</b></td> |
<td><b>Relaxation time + Softbake</b></td> | <td><b>Relaxation time + Softbake</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%" /></a><br /> |
Sawatec</td> | Sawatec</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e8/Cl3.png" /><br /> |
Softbake wafer using Sawatec hotplate, to solidify the photo resist | Softbake wafer using Sawatec hotplate, to solidify the photo resist | ||
</td> | </td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>4</b></td> |
<td><b>Photolith:</b>UV exposure</td> | <td><b>Photolith:</b>UV exposure</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" data-lightbox="img1" data-title="Mask Aligner"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="70%"/></a><br /> |
Mask Aligner</td> | Mask Aligner</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/ab/Cl4.png" /><br /> |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | ||
</td> | </td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>5</b></td> |
<td><b>Post exposure bake</b></td> | <td><b>Post exposure bake</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%"/></a><br /> |
Sawatec</td> | Sawatec</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/98/Cl5.png" /><br /> |
Bake wafer using Sawatec hotplate | Bake wafer using Sawatec hotplate | ||
</td> | </td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>6</b></td> |
<td><b>Relaxation delay</b></td> | <td><b>Relaxation delay</b></td> | ||
<td class="cntr"></td> | <td class="cntr"></td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>7</b></td> |
<td><b>Photolith:</b> Develop</td> | <td><b>Photolith:</b> Develop</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" data-lightbox="img1" data-title="Wetbench plane solvent"><img src="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" width="70%"/></a><br /> |
Wetbench plane solvent</td> | Wetbench plane solvent</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br /> |
This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench | This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench | ||
</td> | </td> | ||
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<tr> | <tr> | ||
- | <td><b> | + | <td><b>8</b></td> |
<td><b>Hard bake</b></td> | <td><b>Hard bake</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" data-lightbox="img1" data-title="DataPlate"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="70%"/></a><br /> |
DataPlate </td> | DataPlate </td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br /> |
Bake 135°C 2 hours, using an oven | Bake 135°C 2 hours, using an oven | ||
</td> | </td> | ||
Line 259: | Line 334: | ||
</table> | </table> | ||
+ | <br/> | ||
- | + | <h2 id="flowlayer">Flow layer process outline</h2> | |
- | < | + | |
<table class="table table-striped valign-middle"> | <table class="table table-striped valign-middle"> | ||
<thead> | <thead> | ||
Line 273: | Line 348: | ||
<tbody> | <tbody> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>1</b></td> |
<td><b>Substrate:</b> Si test Priming</td> | <td><b>Substrate:</b> Si test Priming</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" data-lightbox="img1" data-title="YES III"><img src="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" width="70%"/></a><br /> |
YES III</td> | YES III</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/35/Fl1.png" /><br /> |
Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating</td> | Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating</td> | ||
</tr> | </tr> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>2</b></td> |
<td><b>Photolith:</b> Resist deposition | <td><b>Photolith:</b> Resist deposition | ||
Photo Resist : AZ9260 – 14μm | Photo Resist : AZ9260 – 14μm | ||
</td> | </td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" data-lightbox="img1" data-title="EVG 150"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="70%"/></a><br /> |
EVG 150</td> | EVG 150</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl2.png" /><br /> |
A layer of positive photoresist is added on the wafer by spincoating</td> | A layer of positive photoresist is added on the wafer by spincoating</td> | ||
</tr> | </tr> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>3</b></td> |
<td><b>Rehydratation time</b></td> | <td><b>Rehydratation time</b></td> | ||
<td class="cntr"></td> | <td class="cntr"></td> | ||
Line 301: | Line 376: | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>4</b></td> |
<td><b>Photolith:</b>UV exposure</td> | <td><b>Photolith:</b>UV exposure</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" data-lightbox="img1" data-title="Mask Aligner"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="70%"/></a><br /> |
Mask Aligner</td> | Mask Aligner</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/66/Fl3.png" /><br /> |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | ||
</td> | </td> | ||
Line 311: | Line 386: | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>5</b></td> |
<td><b>Develop immediately</b></td> | <td><b>Develop immediately</b></td> | ||
<td class="cntr"></td> | <td class="cntr"></td> | ||
Line 318: | Line 393: | ||
</tr> | </tr> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>6</b></td> |
<td><b>Photolith:</b> Develop</td> | <td><b>Photolith:</b> Develop</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" data-lightbox="img1" data-title="EVG 150"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="70%"/></a><br /> |
EVG 150</td> | EVG 150</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/5/5c/Fl4.png" /><br /> |
This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150 | This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150 | ||
</td> | </td> | ||
Line 328: | Line 403: | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>7</b></td> |
<td><b>Rinse with Deionized water</b></td> | <td><b>Rinse with Deionized water</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Colliard Wetbench"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="70%"/></a><br /> |
Coillard Wetbench</td> | Coillard Wetbench</td> | ||
<td class="cntr">Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench | <td class="cntr">Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench | ||
Line 337: | Line 412: | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>8</b></td> |
<td><b>Bake to round edges</b></td> | <td><b>Bake to round edges</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" data-lightbox="img1" data-title="DataPlate"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="70%"/></a><br /> |
DataPlate</td> | DataPlate</td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl5.png" /><br /> |
Bake in horizontal position, 160°C 2 hours | Bake in horizontal position, 160°C 2 hours | ||
</td> | </td> | ||
Line 348: | Line 423: | ||
</table> | </table> | ||
+ | |||
+ | <a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Designing" class="btn btn-primary pull-left" role="button"><- Designing a chip</a> | ||
+ | |||
+ | <a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Making/PartII" class="btn btn-primary pull-right" role="button">Next step: Making a chip part II -></a> | ||
+ | <div class="clearfix"></div> | ||
+ | |||
+ | </div> | ||
+ | </div> | ||
+ | </div> | ||
+ | |||
+ | |||
+ | |||
+ | <div class="col col-md-3"> | ||
+ | <nav id="affix-nav" class="sidebar hidden-sm hidden-xs"> | ||
+ | <ul class="nav sidenav box" data-spy="affix" data-offset-top="200" data-offset-bottom="600"> | ||
+ | <li class="active"><a href="#introductiontophotoresist">Introduction</a></li> | ||
+ | <li><a href="#processoutline">Mask process and outline</a></li> | ||
+ | <li><a href="#controllayer">Control layer process outline</a></li> | ||
+ | <li><a href="#flowlayer">Flow layer process outline</a></li> | ||
+ | </ul> | ||
+ | </nav> | ||
</div> | </div> | ||
</div> | </div> |
Latest revision as of 01:24, 18 October 2014
Introduction to photolithography
The following processes will explain how a mask and a positive/negative resist wafer are made. These two components are essential for the creation of our chips, as they are the master plan, the mold for the chip. This is how it works: a mask is used as a mold to make a wafer, and a wafer is used as a mold to make each of the microfluidic chip's layers (control and flow layers).
Here are defined the two main types of photoresist. A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:
- A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.
- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.
![](https://static.igem.org/mediawiki/2014/a/ac/Resist.png)