Team:EPF Lausanne/Microfluidics/Making/PartI
From 2014.igem.org
Arthurgiroux (Talk | contribs) |
|||
(71 intermediate revisions not shown) | |||
Line 11: | Line 11: | ||
<!-- MENU --> | <!-- MENU --> | ||
- | <nav class="navbar navbar-default" role="navigation"> | + | <!-- MENU --> |
+ | <nav class="navbar navbar-default navbar_alt" role="navigation"> | ||
<div class="container-fluid"> | <div class="container-fluid"> | ||
<!-- Brand and toggle get grouped for better mobile display --> | <!-- Brand and toggle get grouped for better mobile display --> | ||
Line 30: | Line 31: | ||
<div class="nav-collapse"> | <div class="nav-collapse"> | ||
<ul class="nav"> | <ul class="nav"> | ||
- | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne">Home</a></li> | |
<li class="dropdown"> | <li class="dropdown"> | ||
- | <a href=" | + | <a href="#" class="dropdown-toggle active" data-toggle="dropdown">Project <span class="caret"></span></a> |
<ul class="dropdown-menu" role="menu"> | <ul class="dropdown-menu" role="menu"> | ||
<li><a href="https://2014.igem.org/Team:EPF_Lausanne/Overview">Overview</a></li> | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Overview">Overview</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Envelope_stress_responsive_bacteria">Stress Responsive Bacteria</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Yeast">Osmo Responsive Yeast</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics" class="active">Microfluidics</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Hardware">Hardware</a></li> | ||
<li><a href="https://2014.igem.org/Team:EPF_Lausanne/Applications">Applications</a></li> | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Applications">Applications</a></li> | ||
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/HumanPractice">Human Practices</a></li> | + | |
- | + | ||
+ | <!-- <li><a href="https://2014.igem.org/Team:EPF_Lausanne/HumanPractice">Human Practices</a></li> | ||
+ | --> </ul> | ||
</li> | </li> | ||
- | + | ||
- | <a href=" | + | <li class="dropdown"> |
+ | <a href="#" class="dropdown-toggle" data-toggle="dropdown">Achievements <span class="caret"></span></a> | ||
<ul class="dropdown-menu" role="menu"> | <ul class="dropdown-menu" role="menu"> | ||
- | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Results">Results</a></li> | |
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/ | + | |
<li><a href="https://2014.igem.org/Team:EPF_Lausanne/Data">Data</a></li> | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Data">Data</a></li> | ||
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/ | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Judging">Judging</a></li> |
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Parts">Parts</a></li> | ||
</ul> | </ul> | ||
+ | </li> | ||
+ | |||
+ | <li class="dropdown"> | ||
+ | <a href="#" class="dropdown-toggle" data-toggle="dropdown">Policy & Practice <span class="caret"></span></a> | ||
+ | <ul class="dropdown-menu" role="menu"> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/HumanPractice">Human Practice</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Safety">Bio Safety</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/PolicyPractice">Metafluidics</a></li> | ||
+ | |||
+ | <!-- <li><a href="https://2014.igem.org/Team:EPF_Lausanne/HumanPractice">Human Practices</a></li> | ||
+ | --> </ul> | ||
</li> | </li> | ||
<li class="dropdown"> | <li class="dropdown"> | ||
- | <a href=" | + | <a href="#" class="dropdown-toggle" data-toggle="dropdown">Notebook <span class="caret"></span></a> |
<ul class="dropdown-menu" role="menu"> | <ul class="dropdown-menu" role="menu"> | ||
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Team"> | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Notebook/Bacteria">Bacteria</a></li> |
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/ | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Notebook/Yeast">Yeast</a></li> |
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Notebook/Microfluidics">Microfluidics</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Protocol">Protocols</a></li> | ||
</ul> | </ul> | ||
</li> | </li> | ||
<li class="dropdown"> | <li class="dropdown"> | ||
- | <a href=" | + | <a href="#" class="dropdown-toggle" data-toggle="dropdown">Team <span class="caret"></span></a> |
<ul class="dropdown-menu" role="menu"> | <ul class="dropdown-menu" role="menu"> | ||
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/ | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Notebook">Timeline</a></li> |
- | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/ | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Team">Meet us!</a></li> |
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Attributions">Attributions</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Acknowledgments">Acknowledgments</a></li> | ||
</ul> | </ul> | ||
</li> | </li> | ||
Line 75: | Line 98: | ||
+ | <div class="container"> | ||
+ | <div class="box" id="boxbread"> | ||
- | < | + | <ol class="breadcrumb breadcrumb-arrow"> |
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne"><i class="glyphicon glyphicon-home"></i> Home</a></li> | ||
+ | <li class="dropdown"><a href="#" class="dropdown-toggle" data-toggle="dropdown"><i class="glyphicon glyphicon-cog"></i> Project <b class="caret"></b></a> | ||
+ | <ul class="dropdown-menu"> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Overview">Overview</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Envelope_stress_responsive_bacteria">Stress Responsive Bacteria</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Yeast">Osmo Responsive Yeast</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Hardware">Hardware</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Applications">Applications</a></li> | ||
+ | </ul> | ||
+ | </li> | ||
+ | <li class="dropdown"><a href="#" class="dropdown-toggle" data-toggle="dropdown"><i class="glyphicon glyphicon-search"></i> Microfluidics <b class="caret"></b></a> | ||
+ | <ul class="dropdown-menu"> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics">Overview</a></li> | ||
+ | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Designing">Designing a chip</a></li> | ||
- | < | + | <li><a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Making/PartII">Making a chip: Part II</a></li> |
- | < | + | </ul> |
+ | </li> | ||
- | + | <li class="active"><span>Making a chip Part I: mask and wafer</span></li> | |
- | + | </ol> | |
- | + | </div> | |
- | + | ||
- | + | ||
- | + | ||
- | + | ||
- | + | ||
- | < | + | |
- | + | ||
- | + | ||
- | + | ||
- | < | + | <div class="row"> |
+ | <div class="col col-md-9"> | ||
+ | |||
+ | |||
+ | <div class="whitebg box"> | ||
+ | |||
+ | <a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Designing" class="btn btn-primary pull-left" role="button"><- Designing a chip</a> | ||
+ | |||
+ | <a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Making/PartII" class="btn btn-primary pull-right" role="button">Next step: Making a chip part II -></a> | ||
+ | |||
+ | <br /> | ||
+ | |||
+ | <div class="clearfix"></div> | ||
+ | <br /> | ||
+ | |||
+ | <br /> | ||
+ | |||
+ | <h2 id="introductiontophotoresist">Introduction to photolithography</h2> | ||
+ | |||
+ | <br/> | ||
+ | |||
+ | <p class="lead"> | ||
+ | The following processes will explain how a mask and a positive/negative resist wafer are made. These two components are essential for the creation of our chips, as they are the master plan, the mold for the chip. This is how it works: a mask is used as a mold to make a wafer, and a wafer is used as a mold to make each of the microfluidic chip's layers (control and flow layers).</p> | ||
+ | |||
+ | <div class="row"> | ||
+ | <div class="cntr col col-md-6"> | ||
+ | <p>Mask</p> | ||
+ | <a href="https://static.igem.org/mediawiki/2014/a/a8/Mask.JPG" data-lightbox="image1" data-title="Mask (to make wafer)"><img src="https://static.igem.org/mediawiki/2014/a/a8/Mask.JPG" class="img-border" width="35%"></a> | ||
+ | </div> | ||
+ | <div class="cntr col col-md-6"> | ||
+ | <p>Wafers</p> | ||
+ | <a href="https://static.igem.org/mediawiki/2014/9/9f/Wafers.JPG" data-lightbox="image1" data-title="Wafers (to make the chip)"><img src="https://static.igem.org/mediawiki/2014/9/9f/Wafers.JPG" class="img-border" width="35%"></a> | ||
+ | </div></div> | ||
+ | |||
+ | |||
+ | <br /><br /> | ||
+ | |||
+ | <p class="lead">Here are defined the two main types of photoresist. A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:</p> | ||
+ | |||
+ | <p class="lead">- A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.</p> | ||
+ | <p class="lead">- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.</p> | ||
+ | |||
+ | <div class="cntr"> | ||
+ | <img src="https://static.igem.org/mediawiki/2014/a/ac/Resist.png" align="middle" class="img-responsive" /> | ||
+ | </div> | ||
<div class="cntr"> | <div class="cntr"> | ||
+ | <h2 id="processoutline">Mask process and outline</h2> | ||
<table class="table table-striped valign-middle"> | <table class="table table-striped valign-middle"> | ||
<thead> | <thead> | ||
Line 109: | Line 185: | ||
<tbody> | <tbody> | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>1</b></td> |
- | <td></td> | + | <td> </td> |
- | <td></td> | + | <td> </td> |
<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br /> | ||
Cross section of a photolithography mask</td> | Cross section of a photolithography mask</td> | ||
Line 117: | Line 193: | ||
<tr> | <tr> | ||
- | <td><b> | + | <td><b>2</b></td> |
<td><b>Laser exposure</b></td> | <td><b>Laser exposure</b></td> | ||
- | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | + | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" data-lightbox="img1" data-title="Heidelberg DWL200, Laser lithography system"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" width="60%"/></a><br /> |
Heidelberg DWL200, Laser lithography system</td> | Heidelberg DWL200, Laser lithography system</td> | ||
<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.</td> | The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.</td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>3</b></td> | ||
+ | <td><b>Developing of the mask</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" data-lightbox="img1" data-title="DV10 Mask and Thick positive resist developer"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" width="60%"/></a><br /> | ||
+ | DV10 Mask and Thick positive resist developer</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/6c/Cr_blank_fab3.gif" /><br /> | ||
+ | A chemical treatment is used to | ||
+ | remove the PR that was exposed by the laser in the previous step, | ||
+ | creating the ‘holes’ on the photoresist | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>4</b></td> | ||
+ | <td><b>Etching of the chrome</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Coillard Gravure"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/></a><br /> | ||
+ | Coillard Gravure</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/a9/Cr_blank_fab4.gif" /><br /> | ||
+ | The chrome is removed at the sites where the resist layer is missing, using an acid bath. | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>5</b></td> | ||
+ | <td><b>Removal of Resist</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Coillard Photolithographie"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="60%"/></a><br /> | ||
+ | Coillard Photolithographie</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/aa/Cr_blank_fab5.gif" /><br /> | ||
+ | Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>6</b></td> | ||
+ | <td><b>Use of mask</b></td> | ||
+ | <td class="cntr"></td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e1/Cr_blank_use.gif" /><br /> | ||
+ | The mask can now be used to expose its pattern on the wafer using UV light | ||
+ | </td> | ||
</tr> | </tr> | ||
</tbody> | </tbody> | ||
</table> | </table> | ||
+ | <br/> | ||
+ | <h2 id="controllayer">Control Layer Process outline</h2> | ||
+ | <table class="table table-striped valign-middle"> | ||
+ | <thead> | ||
+ | <tr> | ||
+ | <th>Step</th> | ||
+ | <th>Process description</th> | ||
+ | <th>Machines</th> | ||
+ | <th>Cross-section after process</th> | ||
+ | </tr> | ||
+ | </thead> | ||
+ | <tbody> | ||
+ | <tr> | ||
+ | <td><b>1</b></td> | ||
+ | <td><b>Substrate:</b> Wafer Clean</td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" data-lightbox="img1" data-title="Tepla"><img src="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" width="70%"/></a><br /> | ||
+ | Tepla 300</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/71/Cl1.png" /><br /> | ||
+ | Clean the wafer using plasma treatment </td> | ||
+ | </tr> | ||
+ | <tr> | ||
+ | <td><b>2</b></td> | ||
+ | <td><b>Photolith:</b> Resist deposition | ||
+ | Photo Resist : Su8 GM1070 – 30μm | ||
+ | </td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%"/></a><br /> | ||
+ | Sawatec</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/82/Cl2.png" /><br /> | ||
+ | A layer of negative photoresist is added on the wafer by spincoating</td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>3</b></td> | ||
+ | <td><b>Relaxation time + Softbake</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%" /></a><br /> | ||
+ | Sawatec</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e8/Cl3.png" /><br /> | ||
+ | Softbake wafer using Sawatec hotplate, to solidify the photo resist | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>4</b></td> | ||
+ | <td><b>Photolith:</b>UV exposure</td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" data-lightbox="img1" data-title="Mask Aligner"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="70%"/></a><br /> | ||
+ | Mask Aligner</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/ab/Cl4.png" /><br /> | ||
+ | The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>5</b></td> | ||
+ | <td><b>Post exposure bake</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" data-lightbox="img1" data-title="Sawatec"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" width="70%"/></a><br /> | ||
+ | Sawatec</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/98/Cl5.png" /><br /> | ||
+ | Bake wafer using Sawatec hotplate | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>6</b></td> | ||
+ | <td><b>Relaxation delay</b></td> | ||
+ | <td class="cntr"></td> | ||
+ | <td class="cntr">Wait 1 hour – overnight</td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>7</b></td> | ||
+ | <td><b>Photolith:</b> Develop</td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" data-lightbox="img1" data-title="Wetbench plane solvent"><img src="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" width="70%"/></a><br /> | ||
+ | Wetbench plane solvent</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br /> | ||
+ | This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>8</b></td> | ||
+ | <td><b>Hard bake</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" data-lightbox="img1" data-title="DataPlate"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="70%"/></a><br /> | ||
+ | DataPlate </td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br /> | ||
+ | Bake 135°C 2 hours, using an oven | ||
+ | </td> | ||
+ | </tr> | ||
+ | </tbody> | ||
+ | </table> | ||
+ | |||
+ | <br/> | ||
+ | |||
+ | <h2 id="flowlayer">Flow layer process outline</h2> | ||
+ | <table class="table table-striped valign-middle"> | ||
+ | <thead> | ||
+ | <tr> | ||
+ | <th>Step</th> | ||
+ | <th>Process description</th> | ||
+ | <th>Machines</th> | ||
+ | <th>Cross-section after process</th> | ||
+ | </tr> | ||
+ | </thead> | ||
+ | <tbody> | ||
+ | <tr> | ||
+ | <td><b>1</b></td> | ||
+ | <td><b>Substrate:</b> Si test Priming</td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" data-lightbox="img1" data-title="YES III"><img src="https://static.igem.org/mediawiki/2014/b/b3/YES.jpg" width="70%"/></a><br /> | ||
+ | YES III</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/35/Fl1.png" /><br /> | ||
+ | Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating</td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>2</b></td> | ||
+ | <td><b>Photolith:</b> Resist deposition | ||
+ | Photo Resist : AZ9260 – 14μm | ||
+ | </td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" data-lightbox="img1" data-title="EVG 150"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="70%"/></a><br /> | ||
+ | EVG 150</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl2.png" /><br /> | ||
+ | A layer of positive photoresist is added on the wafer by spincoating</td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>3</b></td> | ||
+ | <td><b>Rehydratation time</b></td> | ||
+ | <td class="cntr"></td> | ||
+ | <td class="cntr">Wait minimum 1 hour, maximum 3 days | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>4</b></td> | ||
+ | <td><b>Photolith:</b>UV exposure</td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" data-lightbox="img1" data-title="Mask Aligner"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" width="70%"/></a><br /> | ||
+ | Mask Aligner</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/66/Fl3.png" /><br /> | ||
+ | The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>5</b></td> | ||
+ | <td><b>Develop immediately</b></td> | ||
+ | <td class="cntr"></td> | ||
+ | <td class="cntr">Wait maximum 1 hour before develop | ||
+ | </td> | ||
+ | </tr> | ||
+ | <tr> | ||
+ | <td><b>6</b></td> | ||
+ | <td><b>Photolith:</b> Develop</td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" data-lightbox="img1" data-title="EVG 150"><img src="https://static.igem.org/mediawiki/2014/c/c2/Evg.jpg" width="70%"/></a><br /> | ||
+ | EVG 150</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/5/5c/Fl4.png" /><br /> | ||
+ | This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150 | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>7</b></td> | ||
+ | <td><b>Rinse with Deionized water</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" data-lightbox="img1" data-title="Colliard Wetbench"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" width="70%"/></a><br /> | ||
+ | Coillard Wetbench</td> | ||
+ | <td class="cntr">Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench | ||
+ | </td> | ||
+ | </tr> | ||
+ | |||
+ | <tr> | ||
+ | <td><b>8</b></td> | ||
+ | <td><b>Bake to round edges</b></td> | ||
+ | <td class="cntr"><a href="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" data-lightbox="img1" data-title="DataPlate"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" width="70%"/></a><br /> | ||
+ | DataPlate</td> | ||
+ | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/2/26/Fl5.png" /><br /> | ||
+ | Bake in horizontal position, 160°C 2 hours | ||
+ | </td> | ||
+ | </tr> | ||
+ | </tbody> | ||
+ | </table> | ||
+ | |||
+ | |||
+ | <a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Designing" class="btn btn-primary pull-left" role="button"><- Designing a chip</a> | ||
+ | |||
+ | <a href="https://2014.igem.org/Team:EPF_Lausanne/Microfluidics/Making/PartII" class="btn btn-primary pull-right" role="button">Next step: Making a chip part II -></a> | ||
+ | <div class="clearfix"></div> | ||
+ | |||
+ | </div> | ||
+ | </div> | ||
+ | </div> | ||
+ | |||
+ | |||
+ | |||
+ | <div class="col col-md-3"> | ||
+ | <nav id="affix-nav" class="sidebar hidden-sm hidden-xs"> | ||
+ | <ul class="nav sidenav box" data-spy="affix" data-offset-top="200" data-offset-bottom="600"> | ||
+ | <li class="active"><a href="#introductiontophotoresist">Introduction</a></li> | ||
+ | <li><a href="#processoutline">Mask process and outline</a></li> | ||
+ | <li><a href="#controllayer">Control layer process outline</a></li> | ||
+ | <li><a href="#flowlayer">Flow layer process outline</a></li> | ||
+ | </ul> | ||
+ | </nav> | ||
</div> | </div> | ||
</div> | </div> |
Latest revision as of 01:24, 18 October 2014
Introduction to photolithography
The following processes will explain how a mask and a positive/negative resist wafer are made. These two components are essential for the creation of our chips, as they are the master plan, the mold for the chip. This is how it works: a mask is used as a mold to make a wafer, and a wafer is used as a mold to make each of the microfluidic chip's layers (control and flow layers).
Here are defined the two main types of photoresist. A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface:
- A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light crosslinks and thus becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer.
- A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer.
![](https://static.igem.org/mediawiki/2014/a/ac/Resist.png)