Team:EPF Lausanne/Microfluidics/Making/PartI
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Mask process and outline
Step | Process description | Machines | Cross-section after process |
---|---|---|---|
01 | ![]() Cross section of a photolithography mask |
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02 | Laser exposure | ![]() Heidelberg DWL200, Laser lithography system |
![]() The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
03 | Developing of the mask | ![]() DV10 Mask and Thick positive resist developer |
![]() A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist |
04 | Etching of the chrome | ![]() Coillard Gravure |
![]() The chrome is removed at the sites where the resist layer is missing, using an acid bath. |
05 | Removal of Resist | ![]() Coillard Photolithographie |
![]() Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. |
06 | Use of mask | ![]() The mask can now be used to expose its pattern on the wafer using UV light |
Control Layer Process outline
Step | Process description | Machines | Cross-section after process |
---|---|---|---|
01 | Substrate: Wafer Clean | ![]() Tepla 300 |
![]() Clean the wafer using plasma treatment |
02 | Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm | ![]() Sawatec |
![]() A layer of negative photoresist is added on the wafer by spincoating |
03 | Relaxation time + Softbake | ![]() Sawatec |
![]() Softbake wafer using Sawatec hotplate, to solidify the photo resist |
04 | Photolith:UV exposure | ![]() Mask Aligner |
![]() The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
05 | Post exposure bake | ![]() Sawatec |
![]() Bake wafer using Sawatec hotplate |
06 | Relaxation delay | Wait 1 hour – overnight | |
07 | Photolith: Develop | ![]() Wetbench plane solvent |
![]() This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench |
08 | Hard bake | ![]() DataPlate |
![]() Bake 135°C 2 hours, using an oven |
Flow layer process outline
Step | Process description | Machines | Cross-section after process |
---|---|---|---|
01 | Substrate: Si test Priming | ![]() YES III |
![]() Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating |
02 | Photolith: Resist deposition Photo Resist : AZ9260 – 14μm | ![]() EVG 150 |
![]() A layer of positive photoresist is added on the wafer by spincoating |
03 | Rehydratation time | Wait minimum 1 hour, maximum 3 days | |
04 | Photolith:UV exposure | ![]() Mask Aligner |
![]() The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
05 | Develop immediately | Wait maximum 1 hour before develop | |
06 | Photolith: Develop | ![]() EVG 150 |
![]() This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150 |
07 | Rinse with Deionized water | ![]() Coillard Wetbench |
Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench |
08 | Bake to round edges | ![]() DataPlate |
![]() Bake in horizontal position, 160°C 2 hours |