Revision as of 17:58, 9 October 2014 by Arthurgiroux (Talk | contribs)

Step	Process description	Machines	Cross-section after process
01			Cross section of a photolithography mask
02	Laser exposure	Heidelberg DWL200, Laser lithography system	The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.
03	Developing of the mask	DV10 Mask and Thick positive resist developer	A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist
04	Etching of the chrome	Coillard Gravure	The chrome is removed at the sites where the resist layer is missing, using an acid bath.
05	Removal of Resist	Coillard Photolithographie	Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface.
06	Use of mask		The mask can now be used to expose its pattern on the wafer using UV light

Step	Process description	Machines	Cross-section after process
01	Substrate: Wafer Clean	Tepla 300	Clean the wafer using plasma treatment
02	Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm	Sawatec	A layer of negative photoresist is added on the wafer by spincoating
03	Relaxation time + Softbake	Sawatec	Softbake wafer using Sawatec hotplate, to solidify the photo resist
04	Photolith:UV exposure	Mask Aligner	The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR.
05	Post exposure bake	Sawatec	Bake wafer using Sawatec hotplate
06	Relaxation delay		Wait 1 hour – overnight
07	Photolith: Develop	Wetbench plane solvent	This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench
08	Hard bake	DataPlate	Bake 135°C 2 hours, using an oven

Team:EPF Lausanne/Microfluidics/Making/PartI

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