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Team:EPF Lausanne/Microfluidics/Making/PartI
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Revision as of 17:48, 9 October 2014 by Arthurgiroux (Talk | contribs)
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 |  Cross section of a photolithography mask |
||
| 02 | Laser exposure |  Heidelberg DWL200, Laser lithography system |
 The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
| 03 | Developing of the mask | DV10 Mask and Thick positive resist developer |
A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist |
| 04 | Etching of the chrome | Coillard Gravure |
The chrome is removed at the sites where the resist layer is missing, using an acid bath. |
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