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Team:EPF Lausanne/Microfluidics/Making/PartI
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Revision as of 17:46, 9 October 2014 by Arthurgiroux (Talk | contribs)
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 |  Cross section of a photolithography mask |
||
| 02 | Laser exposure |  Heidelberg DWL200, Laser lithography system |
 The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
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