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Team:EPF Lausanne/Microfluidics/Making/PartI
From 2014.igem.org
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/7b/Tepla.jpg" /><br /> | ||
Tepla 300</td> | Tepla 300</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/7/71/Cl1.png" /><br /> |
Clean the wafer using plasma treatment </td> | Clean the wafer using plasma treatment </td> | ||
</tr> | </tr> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" /><br /> | ||
Sawatec</td> | Sawatec</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/82/Cl2.png" /><br /> |
A layer of negative photoresist is added on the wafer by spincoating</td> | A layer of negative photoresist is added on the wafer by spincoating</td> | ||
</tr> | </tr> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" /><br /> | ||
Sawatec</td> | Sawatec</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e8/Cl3.png" /><br /> |
Softbake wafer using Sawatec hotplate, to solidify the photo resist | Softbake wafer using Sawatec hotplate, to solidify the photo resist | ||
</td> | </td> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/91/MaskAligner.jpg" /><br /> | ||
Mask Aligner</td> | Mask Aligner</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/ab/Cl4.png" /><br /> |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | ||
</td> | </td> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/0/04/Sawatec.jpg" /><br /> | ||
Sawatec</td> | Sawatec</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/98/Cl5.png" /><br /> |
Bake wafer using Sawatec hotplate | Bake wafer using Sawatec hotplate | ||
</td> | </td> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/89/Wetbench.jpg" /><br /> | ||
Wetbench plane solvent</td> | Wetbench plane solvent</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br /> |
This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench | This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench | ||
</td> | </td> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/3/3d/Dataplate.jpg" /><br /> | ||
DataPlate </td> | DataPlate </td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/f/f5/Cl6.png" /><br /> |
Bake 135°C 2 hours, using an oven | Bake 135°C 2 hours, using an oven | ||
</td> | </td> | ||
Revision as of 12:32, 10 October 2014
Mask process and outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 |  Cross section of a photolithography mask |
||
| 02 | Laser exposure |  Heidelberg DWL200, Laser lithography system |
 The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
| 03 | Developing of the mask |  DV10 Mask and Thick positive resist developer |
 A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist |
| 04 | Etching of the chrome |  Coillard Gravure |
 The chrome is removed at the sites where the resist layer is missing, using an acid bath. |
| 05 | Removal of Resist | Coillard Photolithographie |
 Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. |
| 06 | Use of mask |  The mask can now be used to expose its pattern on the wafer using UV light |
Control Layer Process outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 | Substrate: Wafer Clean |  Tepla 300 |
 Clean the wafer using plasma treatment |
| 02 | Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm |  Sawatec |
 A layer of negative photoresist is added on the wafer by spincoating |
| 03 | Relaxation time + Softbake | Sawatec |
 Softbake wafer using Sawatec hotplate, to solidify the photo resist |
| 04 | Photolith:UV exposure |  Mask Aligner |
 The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
| 05 | Post exposure bake | Sawatec |
 Bake wafer using Sawatec hotplate |
| 06 | Relaxation delay | Wait 1 hour – overnight | |
| 07 | Photolith: Develop |  Wetbench plane solvent |
 This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench |
| 08 | Hard bake |  DataPlate |
Bake 135°C 2 hours, using an oven |
Flow layer process outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 | Substrate: Si test Priming |  YES III |
Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating |
| 02 | Photolith: Resist deposition Photo Resist : AZ9260 – 14μm |  EVG 150 |
A layer of positive photoresist is added on the wafer by spincoating |
| 03 | Rehydratation time | Wait minimum 1 hour, maximum 3 days | |
| 04 | Photolith:UV exposure | Mask Aligner |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
| 05 | Develop immediately | Wait maximum 1 hour before develop | |
| 06 | Photolith: Develop | EVG 150 |
This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150 |
| 07 | Rinse with Deionized water | Coillard Wetbench |
Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench |
| 08 | Bake to round edges | DataPlate |
Bake in horizontal position, 160°C 2 hours |
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