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Team:EPF Lausanne/Microfluidics/Making/PartI
From 2014.igem.org
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" /><br /> | ||
DV10 Mask and Thick positive resist developer</td> | DV10 Mask and Thick positive resist developer</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/6c/Cr_blank_fab3.gif" /><br /> |
A chemical treatment is used to | A chemical treatment is used to | ||
remove the PR that was exposed by the laser in the previous step, | remove the PR that was exposed by the laser in the previous step, | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br /> | ||
Coillard Gravure</td> | Coillard Gravure</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/a9/Cr_blank_fab4.gif /><br /> |
The chrome is removed at the sites where the resist layer is missing, using an acid bath. | The chrome is removed at the sites where the resist layer is missing, using an acid bath. | ||
</td> | </td> | ||
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br /> | ||
Coillard Photolithographie</td> | Coillard Photolithographie</td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/aa/Cr_blank_fab5.gif" /><br /> |
Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. | Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. | ||
</td> | </td> | ||
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<td><b>Use of mask</b></td> | <td><b>Use of mask</b></td> | ||
<td class="cntr"></td> | <td class="cntr"></td> | ||
| - | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/ | + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e1/Cr_blank_use.gif" /><br /> |
The mask can now be used to expose its pattern on the wafer using UV light | The mask can now be used to expose its pattern on the wafer using UV light | ||
</td> | </td> | ||
Revision as of 12:20, 10 October 2014
Mask process and outline
| Step | Process description | Machines | Cross-section after process | |
|---|---|---|---|---|
| 01 |  Cross section of a photolithography mask |
|||
| 02 | Laser exposure |  Heidelberg DWL200, Laser lithography system |
 The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
|
| 03 | Developing of the mask |  DV10 Mask and Thick positive resist developer |
 A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist |
|
| 04 | Etching of the chrome |  Coillard Gravure |
 Coillard Photolithographie |
 Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. |
| 06 | Use of mask |  The mask can now be used to expose its pattern on the wafer using UV light |
Control Layer Process outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 | Substrate: Wafer Clean |  Tepla 300 |
Clean the wafer using plasma treatment |
| 02 | Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm |  Sawatec |
A layer of negative photoresist is added on the wafer by spincoating |
| 03 | Relaxation time + Softbake | Sawatec |
Softbake wafer using Sawatec hotplate, to solidify the photo resist |
| 04 | Photolith:UV exposure |  Mask Aligner |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
| 05 | Post exposure bake | Sawatec |
Bake wafer using Sawatec hotplate |
| 06 | Relaxation delay | Wait 1 hour – overnight | |
| 07 | Photolith: Develop |  Wetbench plane solvent |
This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench |
| 08 | Hard bake |  DataPlate |
Bake 135°C 2 hours, using an oven |
Flow layer process outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 | Substrate: Si test Priming |  YES III |
Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating |
| 02 | Photolith: Resist deposition Photo Resist : AZ9260 – 14μm |  EVG 150 |
A layer of positive photoresist is added on the wafer by spincoating |
| 03 | Rehydratation time | Wait minimum 1 hour, maximum 3 days | |
| 04 | Photolith:UV exposure | Mask Aligner |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
| 05 | Develop immediately | Wait maximum 1 hour before develop | |
| 06 | Photolith: Develop | EVG 150 |
This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150 |
| 07 | Rinse with Deionized water | Coillard Wetbench |
Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench |
| 08 | Bake to round edges | DataPlate |
Bake in horizontal position, 160°C 2 hours |
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