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Team:EPF Lausanne/Microfluidics/Making/PartI
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<div class="cntr"> | <div class="cntr"> | ||
| + | <h3>Mask process and outline</h3> | ||
<table class="table table-striped valign-middle"> | <table class="table table-striped valign-middle"> | ||
<thead> | <thead> | ||
| Line 144: | Line 145: | ||
<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
The chrome is removed at the sites where the resist layer is missing, using an acid bath. | The chrome is removed at the sites where the resist layer is missing, using an acid bath. | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>05</b></td> | ||
| + | <td><b>Removal of Resist</b></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Coillard Photolithographie</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>06</b></td> | ||
| + | <td><b>Use of mask</b></td> | ||
| + | <td class="cntr"></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | The mask can now be used to expose its pattern on the wafer using UV light | ||
| + | </td> | ||
| + | </tr> | ||
| + | </tbody> | ||
| + | </table> | ||
| + | |||
| + | <h3>Control Layer Process outline</h3> | ||
| + | <table class="table table-striped valign-middle"> | ||
| + | <thead> | ||
| + | <tr> | ||
| + | <th>Step</th> | ||
| + | <th>Process description</th> | ||
| + | <th>Machines</th> | ||
| + | <th>Cross-section after process</th> | ||
| + | </tr> | ||
| + | </thead> | ||
| + | <tbody> | ||
| + | <tr> | ||
| + | <td><b>01</b></td> | ||
| + | <td><b>Substrate:</b> Wafer Clean</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Tepla 300</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br /> | ||
| + | Clean the wafer using plasma treatment </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>02</b></td> | ||
| + | <td><b>Photolith:</b> Resist deposition | ||
| + | Photo Resist : Su8 GM1070 – 30μm | ||
| + | </td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Sawatec</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | A layer of negative photoresist is added on the wafer by spincoating</td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>03</b></td> | ||
| + | <td><b>Relaxation time + Softbake</b></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Sawatec</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | Softbake wafer using Sawatec hotplate, to solidify the photo resist | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>04</b></td> | ||
| + | <td><b>Photolith:</b>UV exposure</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Mask Aligner</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>05</b></td> | ||
| + | <td><b>Post exposure bake</b></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Sawatec</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | Bake wafer using Sawatec hotplate | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>06</b></td> | ||
| + | <td><b>Relaxation delay</b></td> | ||
| + | <td class="cntr"></td> | ||
| + | <td class="cntr">Wait 1 hour – overnight</td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>07</b></td> | ||
| + | <td><b>Photolith:</b> Develop</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Wetbench plane solvent</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>08</b></td> | ||
| + | <td><b>Hard bake</b></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | DataPlate </td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | Bake 135°C 2 hours, using an oven | ||
</td> | </td> | ||
</tr> | </tr> | ||
Revision as of 17:58, 9 October 2014
Mask process and outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 |  Cross section of a photolithography mask |
||
| 02 | Laser exposure |  Heidelberg DWL200, Laser lithography system |
 The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
| 03 | Developing of the mask | DV10 Mask and Thick positive resist developer |
A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist |
| 04 | Etching of the chrome | Coillard Gravure |
The chrome is removed at the sites where the resist layer is missing, using an acid bath. |
| 05 | Removal of Resist | Coillard Photolithographie |
Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface. |
| 06 | Use of mask | The mask can now be used to expose its pattern on the wafer using UV light |
Control Layer Process outline
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 | Substrate: Wafer Clean | Tepla 300 |
Clean the wafer using plasma treatment |
| 02 | Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm | Sawatec |
A layer of negative photoresist is added on the wafer by spincoating |
| 03 | Relaxation time + Softbake | Sawatec |
Softbake wafer using Sawatec hotplate, to solidify the photo resist |
| 04 | Photolith:UV exposure | Mask Aligner |
The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR. |
| 05 | Post exposure bake | Sawatec |
Bake wafer using Sawatec hotplate |
| 06 | Relaxation delay | Wait 1 hour – overnight | |
| 07 | Photolith: Develop | Wetbench plane solvent |
This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench |
| 08 | Hard bake | DataPlate |
Bake 135°C 2 hours, using an oven |
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