Team:EPF Lausanne/Microfluidics/Making/PartI

From 2014.igem.org

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       <td>01</td>
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       <td><b>01</b></td>
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       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/d/d8/Cr_blank_fab1.gif" /><br />
       Cross section of a photolithography mask</td>
       Cross section of a photolithography mask</td>
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      <td><b>02</b></td>
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      <td><b>Laser exposure</b></td>
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      <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br />
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      Heidelberg DWL200, Laser lithography system</td>
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      <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
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      The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.</td>
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Revision as of 17:43, 9 October 2014

Step Process description Machines Cross-section after process
01
Cross section of a photolithography mask
02 Laser exposure
Heidelberg DWL200, Laser lithography system

The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.

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