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Team:EPF Lausanne/Microfluidics/Making/PartI
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<td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.</td> | The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.</td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>03</b></td> | ||
| + | <td><b>Developing of the mask</b></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | DV10 Mask and Thick positive resist developer</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | A chemical treatment is used to | ||
| + | remove the PR that was exposed by the laser in the previous step, | ||
| + | creating the ‘holes’ on the photoresist | ||
| + | </td> | ||
| + | </tr> | ||
| + | |||
| + | <tr> | ||
| + | <td><b>04</b></td> | ||
| + | <td><b>Etching of the chrome</b></td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/8/81/DWL200_intro.jpg" /><br /> | ||
| + | Coillard Gravure</td> | ||
| + | <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br /> | ||
| + | The chrome is removed at the sites where the resist layer is missing, using an acid bath. | ||
| + | </td> | ||
</tr> | </tr> | ||
</tbody> | </tbody> | ||
Revision as of 17:48, 9 October 2014
| Step | Process description | Machines | Cross-section after process |
|---|---|---|---|
| 01 |  Cross section of a photolithography mask |
||
| 02 | Laser exposure |  Heidelberg DWL200, Laser lithography system |
 The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR. |
| 03 | Developing of the mask | DV10 Mask and Thick positive resist developer |
A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist |
| 04 | Etching of the chrome | Coillard Gravure |
The chrome is removed at the sites where the resist layer is missing, using an acid bath. |
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