Team:EPF Lausanne/Microfluidics/Making/PartI

From 2014.igem.org

(Difference between revisions)
Line 131: Line 131:
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/4/4d/DV10.jpg" /><br />
       DV10 Mask and Thick positive resist developer</td>
       DV10 Mask and Thick positive resist developer</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
+
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/6/6c/Cr_blank_fab3.gif" /><br />
       A chemical treatment is used to  
       A chemical treatment is used to  
remove the PR that was exposed by the laser in the previous step,
remove the PR that was exposed by the laser in the previous step,
Line 143: Line 143:
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br />
       Coillard Gravure</td>
       Coillard Gravure</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
+
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/a9/Cr_blank_fab4.gif /><br />
       The chrome is removed at the sites where the resist layer is missing, using an acid bath.
       The chrome is removed at the sites where the resist layer is missing, using an acid bath.
</td>
</td>
Line 153: Line 153:
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br />
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/ed/Coillard.jpg" /><br />
       Coillard Photolithographie</td>
       Coillard Photolithographie</td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
+
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/a/aa/Cr_blank_fab5.gif" /><br />
       Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface.
       Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface.
</td>
</td>
Line 162: Line 162:
       <td><b>Use of mask</b></td>
       <td><b>Use of mask</b></td>
       <td class="cntr"></td>
       <td class="cntr"></td>
-
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/9/9e/Cr_blank_fab2.gif" /><br />
+
       <td class="cntr"><img src="https://static.igem.org/mediawiki/2014/e/e1/Cr_blank_use.gif" /><br />
The mask can now be used to expose its pattern on the wafer using UV light
The mask can now be used to expose its pattern on the wafer using UV light
</td>
</td>

Revision as of 12:20, 10 October 2014

Mask process and outline

Step Process description Machines Cross-section after process
01
Cross section of a photolithography mask
02 Laser exposure
Heidelberg DWL200, Laser lithography system

The laser beams on the surface of the photoresist. By doing so, it imprints the pattern of the design on the PR.
03 Developing of the mask
DV10 Mask and Thick positive resist developer

A chemical treatment is used to remove the PR that was exposed by the laser in the previous step, creating the ‘holes’ on the photoresist
04 Etching of the chrome
Coillard Gravure

Coillard Photolithographie

Once the chrome is removed at the precise sites (previous step), the rest of the resist is removed from the whole surface.
06 Use of mask
The mask can now be used to expose its pattern on the wafer using UV light

Control Layer Process outline

Step Process description Machines Cross-section after process
01 Substrate: Wafer Clean
Tepla 300

Clean the wafer using plasma treatment
02 Photolith: Resist deposition Photo Resist : Su8 GM1070 – 30μm
Sawatec

A layer of negative photoresist is added on the wafer by spincoating
03 Relaxation time + Softbake
Sawatec

Softbake wafer using Sawatec hotplate, to solidify the photo resist
04 Photolith:UV exposure
Mask Aligner

The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR.
05 Post exposure bake
Sawatec

Bake wafer using Sawatec hotplate
06 Relaxation delay Wait 1 hour – overnight
07 Photolith: Develop
Wetbench plane solvent

This removes the unexposed photoresist from the wafer using chemical treatment on a wet bench
08 Hard bake
DataPlate

Bake 135°C 2 hours, using an oven

Flow layer process outline

Step Process description Machines Cross-section after process
01 Substrate: Si test Priming
YES III

Dehydrate and prime with HMDS, using the oven to create hydrophobic surface on the wafer, to prepare the wafer for coating
02 Photolith: Resist deposition Photo Resist : AZ9260 – 14μm
EVG 150

A layer of positive photoresist is added on the wafer by spincoating
03 Rehydratation time Wait minimum 1 hour, maximum 3 days
04 Photolith:UV exposure
Mask Aligner

The UV lights are exposed through the Mask on the surface of the wafer. By doing so, it imprints the pattern of the design on the PR.
05 Develop immediately Wait maximum 1 hour before develop
06 Photolith: Develop
EVG 150

This removes the exposed photoresist from the wafer using chemical treatment with the EVG 150
07 Rinse with Deionized water
Coillard Wetbench
Rinse wafers in Quick Dump Rinse then in Ultra Clean bath, using wetbench
08 Bake to round edges
DataPlate

Bake in horizontal position, 160°C 2 hours

Sponsors